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| FLM5359-45F C-Band Internally Matched FET FEATURES High Output Power: P1dB=46.5dBm(Typ.) High Gain: G1dB=8.5dB(Typ.) High PAE: add=36%(Typ.) Broad Band: 5.3~5.9GHz Impedance Matched Zin/Zout = 50 Hermetically Sealed Package DESCRIPTION The FLM5359-45F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25o C) Item Drain-Source Voltage Gate-Source Voltage Total Pow er Dissipation Storage Tem perature Channel Tem perature Symbol VDS VGS PT Tstg Tch Rating 15 -5 115.4 -65 to +175 175 Unit V V W o C o C RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25o C) Item DC Input Voltage Forw ard Gate Current Reverse Gate Current Sym bol VDS IGF IGR Condition RG=13 ohm RG=13 ohm Lim it 12 107.2 -23.2 Unit V mA mA ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25o C) Item Drain Current Transconductance Pinch-off Voltage Gate-Source Breakdow n Voltage Output Pow er at 1dB G.C.P. Pow er Gain at 1dB G.C.P. Drain Current Pow er-added Efficiency Gain Flatness Therm al Resistance Channel Tem perature Rise Sym bol IDSS gm Vp VGSO P1dB G1dB Idsr Nadd G Rth Tch Condition VDS=5V, VGS=0V VDS=5V, IDS=8.0A VDS=5V, IDS=960mA IGS=-960uA VDS=12V IDS(DC)=8.0A (typ.) f= 5.3 ~ 5.9 GHz Zs=ZL=50 ohm Channel to Case 12V x IDS(DC) X Rth Min. -1.0 -5.0 46.0 7.5 Lim it Typ. 16.0 8000 -2.0 46.5 8.5 8.5 36 0.8 Max. -3.5 10.0 1.4 1.0 100 Unit A mS V V dBm dB A % dB o C/W o C CASE STYLE : IK ESD Class III 2000V ~ Note : Based on EIAJ ED-4701 C-111A (C=100pF, R=1.5k) G.C.P.: Gain Compression Point Edition 1.2 September 2004 1 FLM5359-45F C-Band Internally Matched FET POWER DERATING CURVE OUTPUT POWER & POWER ADDED EFFICIENCY vs INPUT POWER VDS=12V, IDS=8.0A, f=5.6GHz 120 Total Power Dissipation [W] 48 46 44 42 40 38 36 26 28 30 32 34 36 38 40 42 120 100 80 60 40 20 0 80 60 40 20 0 0 50 100 150 200 Case Temperature O[ C] Input Power (dBm) OUTPUT POWER vs FREQUENCY VDS=12V, IDS=8.0A 48 46 P1dB Pin=38dBm Output Power [dBm] 44 33dBm 42 40 38 36 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6.0 30dBm 28dBm Frequency [GHz] 2 Power Added Efficiency (%) 100 Output Power (dBm) FLM5359-45F C-Band Internally Matched FET S-PARAMETER +50j +25j 10 +90 +100j +10j 5. G H z 3 56 56 5. 9 +250j Scale for |S21| 2 5. 9 5. G H z 3 5. G H z 3 5. 9 0 5. G H z 3 180 3 0 -10j 5. 9 -250j 56 56 -25j -50j -100j S 11 S 22 0.2 -90 Scale for | S 12| S 12 S 21 VDS=12V, IDS=7.0A Freq. [G H z] 5. 1 5. 2 5. 3 5. 4 5. 5 5. 6 5. 7 5. 8 5. 9 6. 0 6. 1 S 11 M AG 0. 668 0. 595 0. 510 0. 391 0. 268 0. 154 0. 126 0. 194 0. 274 0. 346 0. 421 ANG -150. 7 -168. 2 172. 3 148. 1 119. 3 71. 6 -2. 5 -55. 4 -88. 6 -112. 3 -134. 5 S 21 M AG 2. 792 3. 083 3. 380 3. 652 3. 773 3. 740 3. 593 3. 372 3. 149 2. 900 2. 686 ANG 11. 2 -7. 4 -28. 3 -50. 3 -73. 4 -96. 7 -119. 0 -140. 0 -159. 9 -178. 7 162. 8 S 12 M AG 0. 031 0. 039 0. 048 0. 057 0. 065 0. 071 0. 074 0. 076 0. 073 0. 073 0. 070 ANG -1. 5 -31. 3 -61. 7 -86. 5 -112. 3 -136. 4 -158. 3 -179. 5 160. 9 141. 5 124. 6 S 22 M AG 0. 528 0. 470 0. 420 0. 395 0. 397 0. 422 0. 461 0. 500 0. 529 0. 546 0. 543 ANG -114. 3 -136. 0 -162. 5 166. 1 132. 7 102. 2 75. 6 54. 6 38. 1 23. 9 12. 0 3 FLM5359-45F C-Band Internally Matched FET Package Out Line Case Style : IK PIN ASSIGMENT 1 : GATE 2 : SOURCE 3 : DRAIN 4 : SOURCE Unit : mm 4 FLM5359-45F C-Band Internally Matched FET For further information please contact : CAUTION Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte. Ltd. Hong Kong Branch Rm.1101,Ocean Centre, 5 Canton Road Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. 1000 Kamisukiahara, showa-cho Nakakomagun, Yamanashi 409-3883, Japan (Kokubo Industrial Park) TEL +81-55-275-4411 FAX +81-55-275-9461 Sales Division 1, Kanai-cho, Sakae-ku Yokohama,244-0845,Japan Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not put these products into the mouth. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice.The information does not convey any license under rights of Eudyna Devices Inc. or others. (c) 2004 Eudyna Devices USA Inc. Printed in U.S.A. TEL +81-45-853-8156 FAX +81-45-853-8170 5 |
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